N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-247AD ON Semiconductor FCHD190N65S3R0-F155

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

701 V @ TJ = 150 oC
Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Optimized Capacitance
Typ. RDS(on) = 159 mΩ
Internal Gate Resistance: 0.5 Ω
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Application
Telecommunication
Cloud system
Industrial