N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247AD onsemi FCHD125N65S3R0-F155OS
- RS Stock No.:
- 195-2566P
- Mfr. Part No.:
- FCHD125N65S3R0-F155
- Brand:
- onsemi
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Subtotal 20 units (supplied in a tube)*
£51.62
(exc. VAT)
£61.94
(inc. VAT)
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Units | Per unit |
|---|---|
| 20 + | £2.581 |
*price indicative
- RS Stock No.:
- 195-2566P
- Mfr. Part No.:
- FCHD125N65S3R0-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 181 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 16.25mm | |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 21.34mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 181 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 16.25mm | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 5.3mm | ||
Maximum Operating Temperature +150 °C | ||
Height 21.34mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
703 V @ TJ = 150 oC
Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Optimized Capacitance
Typ. RDS(on) = 159 mΩ
Internal Gate Resistance: 0.5 Ω
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Application
Telecommunication
Cloud system
Industrial
Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Optimized Capacitance
Typ. RDS(on) = 159 mΩ
Internal Gate Resistance: 0.5 Ω
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Application
Telecommunication
Cloud system
Industrial