onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG
- RS Stock No.:
- 195-2529P
- Mfr. Part No.:
- NTMYS014N06CLTWG
- Brand:
- onsemi
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Subtotal 120 units (supplied on a continuous strip)*
£78.48
(exc. VAT)
£94.20
(inc. VAT)
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- Shipping from 13 January 2026
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Units | Per unit |
|---|---|
| 120 - 270 | £0.654 |
| 300 + | £0.567 |
*price indicative
- RS Stock No.:
- 195-2529P
- Mfr. Part No.:
- NTMYS014N06CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 21.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 37 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.25mm | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 9.7 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.15mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 21.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 37 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.25mm | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 9.7 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.15mm | ||
Forward Diode Voltage 1.2V | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free