onsemi N-Channel MOSFET, 36 A, 650 V, 3-Pin TO-220 NTP095N65S3HF
- RS Stock No.:
- 195-2516P
- Mfr. Part No.:
- NTP095N65S3HF
- Brand:
- onsemi
Subtotal 5 units (supplied in a tube)*
£10.43
(exc. VAT)
£12.515
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 785 unit(s), ready to ship
Units | Per unit |
|---|---|
| 5 + | £2.086 |
*price indicative
- RS Stock No.:
- 195-2516P
- Mfr. Part No.:
- NTP095N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 95 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 272 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 95 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 272 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 9.4mm | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.