onsemi N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS3D3N06CLTWG

Save 13% when you buy 500 units

Subtotal 200 units (supplied on a reel)*

£160.00

(exc. VAT)

£192.00

(inc. VAT)

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500 +£0.694

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Packaging Options:
RS Stock No.:
195-2513P
Mfr. Part No.:
NVMYS3D3N06CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

133 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Typical Gate Charge @ Vgs

40.7 @ 10 V nC

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Automotive Standard

AEC-Q101