onsemi N-Channel MOSFET, 200 A, 40 V, 8-Pin LFPAK8 NVMJS1D5N04CLTWG
- RS Stock No.:
- 195-2508
- Mfr. Part No.:
- NVMJS1D5N04CLTWG
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-2508
- Mfr. Part No.:
- NVMJS1D5N04CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | LFPAK8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.15mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type LFPAK8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.9mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Height 1.15mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free