onsemi N-Channel MOSFET, 7 A, 60 V, 3-Pin DPAK NCV8406BDTRKG
- RS Stock No.:
- 195-2461P
- Mfr. Part No.:
- NCV8406BDTRKG
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 195-2461P
- Mfr. Part No.:
- NCV8406BDTRKG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.81 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±14 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -40 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 2.25mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.81 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±14 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -40 °C | ||
Automotive Standard AEC-Q101 | ||
Height 2.25mm | ||
NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
These Devices are Faster than the Rest of the NCV Devices
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
These Devices are Faster than the Rest of the NCV Devices
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial