Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3
- RS Stock No.:
- 192-3386
- Mfr. Part No.:
- CAB450M12XM3
- Brand:
- Wolfspeed
Subtotal (1 unit)*
£815.73
(exc. VAT)
£978.88
(inc. VAT)
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In Stock
- 1 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £815.73 |
*price indicative
- RS Stock No.:
- 192-3386
- Mfr. Part No.:
- CAB450M12XM3
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Maximum Drain Source Voltage | 1200 V | |
| Maximum Drain Source Resistance | 4.6 mΩ | |
| Maximum Gate Threshold Voltage | 3.6V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 50 mW | |
| Maximum Gate Source Voltage | -4 V, 19 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | SiC | |
| Width | 53mm | |
| Typical Gate Charge @ Vgs | 1330 nC @ 4/15V | |
| Length | 80mm | |
| Number of Elements per Chip | 1 | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Maximum Drain Source Voltage 1200 V | ||
Maximum Drain Source Resistance 4.6 mΩ | ||
Maximum Gate Threshold Voltage 3.6V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 50 mW | ||
Maximum Gate Source Voltage -4 V, 19 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material SiC | ||
Width 53mm | ||
Typical Gate Charge @ Vgs 1330 nC @ 4/15V | ||
Length 80mm | ||
Number of Elements per Chip 1 | ||
Height 15.75mm | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- US
High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers