onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
- RS Stock No.:
- 189-0419P
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£82.30
(exc. VAT)
£98.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £8.23 |
*price indicative
- RS Stock No.:
- 189-0419P
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 162 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 348 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -15 V, +25 V | |
| Transistor Material | SiC | |
| Width | 4.82mm | |
| Typical Gate Charge @ Vgs | 56 nC @ 20 V | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 4V | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 162 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 348 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +25 V | ||
Transistor Material SiC | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 56 nC @ 20 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 4V | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive