onsemi N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 NTPF190N65S3HF
- RS Stock No.:
- 189-0264
- Mfr. Part No.:
- NTPF190N65S3HF
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£84.45
(exc. VAT)
£101.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £1.689 | £84.45 |
*price indicative
- RS Stock No.:
- 189-0264
- Mfr. Part No.:
- NTPF190N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Width | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.63mm | |
| Height | 16.12mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 36 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Width 4.9mm | ||
Number of Elements per Chip 1 | ||
Length 10.63mm | ||
Height 16.12mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Optimized Capacitance
Typ. RDS(on) = 161 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Computing
Consumer
Industrial
End Products
Notebook / Desktop computer / Game console
Telecom / Server
LED Lighting / Ballast
Adapter
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Optimized Capacitance
Typ. RDS(on) = 161 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Computing
Consumer
Industrial
End Products
Notebook / Desktop computer / Game console
Telecom / Server
LED Lighting / Ballast
Adapter