Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3
- RS Stock No.:
- 188-5117P
- Mfr. Part No.:
- SiSS61DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£64.20
(exc. VAT)
£77.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.642 |
| 250 - 490 | £0.485 |
| 500 - 990 | £0.438 |
| 1000 + | £0.405 |
*price indicative
- RS Stock No.:
- 188-5117P
- Mfr. Part No.:
- SiSS61DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 111.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | PowerPAK 1212-8S | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 65.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Typical Gate Charge @ Vgs | 154 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.78mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 111.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerPAK 1212-8S | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 65.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Typical Gate Charge @ Vgs 154 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.78mm | ||
- COO (Country of Origin):
- CN
P-Channel 20 V (D-S) MOSFET.
TrenchFET® Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
Leadership RDS(on) in compact and thermally enhanced package