Vishay N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-220 SIHA100N60E-GE3
- RS Stock No.:
- 188-4970P
- Mfr. Part No.:
- SIHA100N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£74.60
(exc. VAT)
£89.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 19 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £3.73 |
| 50 - 98 | £3.53 |
| 100 - 198 | £3.31 |
| 200 + | £3.11 |
*price indicative
- RS Stock No.:
- 188-4970P
- Mfr. Part No.:
- SIHA100N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.3mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Maximum Operating Temperature +150 °C | ||
Height 15.3mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
E Series Power MOSFET.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)