onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NVHL110N65S3F
- RS Stock No.:
- 186-1315P
- Mfr. Part No.:
- NVHL110N65S3F
- Brand:
- onsemi
Save 13% when you buy 200 units
Subtotal 20 units (supplied in a tube)*
£85.90
(exc. VAT)
£103.08
(inc. VAT)
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- Shipping from 09 January 2026
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Units | Per unit |
|---|---|
| 20 - 198 | £4.295 |
| 200 + | £3.725 |
*price indicative
- RS Stock No.:
- 186-1315P
- Mfr. Part No.:
- NVHL110N65S3F
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 240 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 4.82mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Maximum Operating Temperature | +150 °C | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Maximum Operating Temperature +150 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
Non Compliant
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
PPAP Capable
Typ. RDS(on) = 93 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
PPAP Capable
Typ. RDS(on) = 93 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter