onsemi N-Channel MOSFET, 24 A, 650 V, 4-Pin PQFN4 FCMT125N65S3
- RS Stock No.:
- 185-9219P
- Mfr. Part No.:
- FCMT125N65S3
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 185-9219P
- Mfr. Part No.:
- FCMT125N65S3
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PQFN4 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 181 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 8mm | |
| Number of Elements per Chip | 1 | |
| Width | 8mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PQFN4 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 181 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 8mm | ||
Number of Elements per Chip 1 | ||
Width 8mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
- COO (Country of Origin):
- PH
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 49 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)
Optimized Capacitance
Typ. RDS(on) = 100 mΩ
Internal Gate Resistance: 0.5 Ω
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
LED Lighting
Adapter
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 49 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)
Optimized Capacitance
Typ. RDS(on) = 100 mΩ
Internal Gate Resistance: 0.5 Ω
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
LED Lighting
Adapter