onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK8 NVMJS1D3N04CTWG
- RS Stock No.:
- 185-9186P
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
Save 23% when you buy 2000 units
Subtotal 40 units (supplied on a continuous strip)*
£51.40
(exc. VAT)
£61.68
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 3,000 unit(s), ready to ship
Units | Per unit |
|---|---|
| 40 - 396 | £1.285 |
| 400 - 1996 | £1.115 |
| 2000 + | £0.98 |
*price indicative
- RS Stock No.:
- 185-9186P
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 235 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | LFPAK8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 128 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.9mm | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 235 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type LFPAK8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 128 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Automotive Standard AEC-Q101 | ||
Height 1.2mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Non Compliant
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free