N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN onsemi NVMFS6H864NT1G
- RS Stock No.:
- 185-9174
- Mfr. Part No.:
- NVMFS6H864NT1G
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 185-9174
- Mfr. Part No.:
- NVMFS6H864NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 32 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.1mm | |
| Length | 5.1mm | |
| Typical Gate Charge @ Vgs | 6.9 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Length 5.1mm | ||
Typical Gate Charge @ Vgs 6.9 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Non Compliant
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF − Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Automotive Qualified
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
Load Switch
DC/DC converter
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF − Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Automotive Qualified
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
Load Switch
DC/DC converter
