Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	6.5V
	Minimum Gate Threshold Voltage	4.5V
	Maximum Power Dissipation	790 W
	Transistor Configuration	Single
	Typical Gate Charge @ Vgs	399
	Maximum Operating Temperature	+175 °C
	Length	15.87mm
	Width	4.82mm
	Number of Elements per Chip	1
	Height	20.82mm
	Forward Diode Voltage	4V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 6.5V
	Minimum Gate Threshold Voltage 4.5V
	Maximum Power Dissipation 790 W
	Transistor Configuration Single
	Typical Gate Charge @ Vgs 399
	Maximum Operating Temperature +175 °C
	Length 15.87mm
	Width 4.82mm
	Number of Elements per Chip 1
	Height 20.82mm
	Forward Diode Voltage 4V
	Minimum Operating Temperature -55 °C

Datasheet FGY75T120SQDN

Non Compliant

COO (Country of Origin):: CN

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
UPS
End Products
Industrial

N-Channel MOSFET Depletion, 3-Pin TO-247 onsemi FGY75T120SQDN