N-Channel MOSFET, 558 A, 40 V, 8-Pin DFNW onsemi NVMTS0D4N04CTXG

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RS Stock No.:
185-8158
Mfr. Part No.:
NVMTS0D4N04CTXG
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

558 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

450 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

244 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

8.1mm

Width

8mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

251 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Non Compliant

COO (Country of Origin):
PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body