N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-323 onsemi BSS123W
- RS Stock No.:
- 184-4673P
- Mfr. Part No.:
- BSS123W
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal 1000 units (supplied on a reel)*
£92.00
(exc. VAT)
£110.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1000 - 2900 | £0.092 |
| 3000 - 8900 | £0.079 |
| 9000 - 23900 | £0.07 |
| 24000 + | £0.069 |
*price indicative
- RS Stock No.:
- 184-4673P
- Mfr. Part No.:
- BSS123W
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 200 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 1.25mm | |
| Number of Elements per Chip | 1 | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 200 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 1.25mm | ||
Number of Elements per Chip 1 | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
0.17 A, 100 V
RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Capacitance
Fast Switching Speed
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Logic Level Transistors
High Speed Line Drivers
Power Management
Power Supply and Switching
RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Capacitance
Fast Switching Speed
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Logic Level Transistors
High Speed Line Drivers
Power Management
Power Supply and Switching