N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-323 onsemi BSS123W

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Packaging Options:
RS Stock No.:
184-4673P
Mfr. Part No.:
BSS123W
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Width

1.25mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.

0.17 A, 100 V
RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Capacitance
Fast Switching Speed
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Logic Level Transistors
High Speed Line Drivers
Power Management
Power Supply and Switching