onsemi N-Channel MOSFET, 3.6 A, 20 V, 3-Pin SOT-23 NTR3C21NZT1G
- RS Stock No.:
- 184-1282P
- Mfr. Part No.:
- NTR3C21NZT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£87.50
(exc. VAT)
£105.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 5,500 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.175 |
| 1000 + | £0.152 |
*price indicative
- RS Stock No.:
- 184-1282P
- Mfr. Part No.:
- NTR3C21NZT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 55 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 470 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 17.8 nC @ 4.5 V | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Height | 1.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 55 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 470 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 17.8 nC @ 4.5 V | ||
Length 3.04mm | ||
Width 1.4mm | ||
Height 1.01mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- CN
Ultra Low RDS(on) in SOT−23 Package
Advanced Trench Technology
Improved System Efficiency
Applications:
Power Load Switch
Power Management
Advanced Trench Technology
Improved System Efficiency
Applications:
Power Load Switch
Power Management