onsemi Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 NTJD4401NT1G
- RS Stock No.:
- 184-1229P
- Mfr. Part No.:
- NTJD4401NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£61.00
(exc. VAT)
£73.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.122 |
| 1000 + | £0.106 |
*price indicative
- RS Stock No.:
- 184-1229P
- Mfr. Part No.:
- NTJD4401NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 910 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SC-88 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 440 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 550 mW | |
| Maximum Gate Source Voltage | ±12 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 1.3 nC @ 4.5 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 910 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SC-88 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 440 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 550 mW | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 1.3 nC @ 4.5 V | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
- COO (Country of Origin):
- CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion