ROHM US6K2 Dual N-Channel MOSFET, 1.4 A, 30 V, 6-Pin SOT-363T US6K2TR

Unavailable
RS will no longer stock this product.
RS Stock No.:
183-5544
Mfr. Part No.:
US6K2TR
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

30 V

Series

US6K2

Package Type

SOT-363T

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

150 °C

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Length

2.1mm

Width

1.8mm

Number of Elements per Chip

2

Height

0.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP
Complex type MOSFETs (N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

4Ｖ-drive type
Nch+Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free