ROHM RJ1P12BBD N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK RJ1P12BBDTLL

Unavailable
RS will no longer stock this product.
RS Stock No.:
183-5418
Mfr. Part No.:
RJ1P12BBDTLL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

RJ1P12BBD

Package Type

TO-263AB

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

178 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

9.2mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

150 °C

Height

4.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
KR
RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching.

Low on - resistance
High power small mold package
Pb-free lead plating

Halogen free