MPN

ROHM QS5U33 P-Channel MOSFET, 2 A, 30 V, 5-Pin TSMT QS5U33TR

RS Stock No.:: 183-5002
Mfr. Part No.:: QS5U33TR
Brand:: ROHM

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RS will no longer stock this product.

RS Stock No.:: 183-5002
Mfr. Part No.:: QS5U33TR
Brand:: ROHM

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	P
	Maximum Continuous Drain Current	2 A
	Maximum Drain Source Voltage	30 V
	Package Type	TSMT
	Series	QS5U33
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	225 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	900 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	3.4 nC @ 5 V
	Length	3mm
	Number of Elements per Chip	1
	Width	1.8mm
	Height	0.95mm
	Forward Diode Voltage	1.2V

	Select all
	Brand ROHM
	Channel Type P
	Maximum Continuous Drain Current 2 A
	Maximum Drain Source Voltage 30 V
	Package Type TSMT
	Series QS5U33
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 225 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 900 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 3.4 nC @ 5 V
	Length 3mm
	Number of Elements per Chip 1
	Width 1.8mm
	Height 0.95mm
	Forward Diode Voltage 1.2V

Datasheet QS5U33TR

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Multiple Schottky Barrier Diodes Middle Power MOSFET
Small Surface Mount Package
Pb Free