MPN

ROHM QS5U27 P-Channel MOSFET, 1.5 A, 20 V, 5-Pin TSMT QS5U27TR

RS Stock No.:: 183-4995
Mfr. Part No.:: QS5U27TR
Brand:: ROHM

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RS will no longer stock this product.

RS Stock No.:: 183-4995
Mfr. Part No.:: QS5U27TR
Brand:: ROHM

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	P
	Maximum Continuous Drain Current	1.5 A
	Maximum Drain Source Voltage	20 V
	Series	QS5U27
	Package Type	TSMT
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	340 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	900 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±12 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	4.2 nC @ 4.5 V
	Length	3mm
	Width	1.8mm
	Maximum Operating Temperature	+150 °C
	Forward Diode Voltage	1.2V
	Height	0.95mm

	Select all
	Brand ROHM
	Channel Type P
	Maximum Continuous Drain Current 1.5 A
	Maximum Drain Source Voltage 20 V
	Series QS5U27
	Package Type TSMT
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 340 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 900 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage ±12 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 4.2 nC @ 4.5 V
	Length 3mm
	Width 1.8mm
	Maximum Operating Temperature +150 °C
	Forward Diode Voltage 1.2V
	Height 0.95mm

Datasheet QS5U27TR

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Multiple Schottky Barrier Diodes Middle Power MOSFET
Small Surface Mount Package
Pb Free