Diodes Inc P-Channel MOSFET, 7.4 A, 20 V, 8-Pin TSSOP DMP2021UTS-13
- RS Stock No.:
- 182-7357P
- Mfr. Part No.:
- DMP2021UTS-13
- Brand:
- DiodesZetex
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Subtotal 100 units (supplied on a continuous strip)*
£44.80
(exc. VAT)
£53.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 October 2026
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Units | Per unit |
|---|---|
| 100 - 490 | £0.448 |
| 500 - 990 | £0.409 |
| 1000 - 1990 | £0.346 |
| 2000 + | £0.321 |
*price indicative
- RS Stock No.:
- 182-7357P
- Mfr. Part No.:
- DMP2021UTS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 7.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSSOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.35V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±10 V | |
| Width | 3.1mm | |
| Typical Gate Charge @ Vgs | 59 nC @ 8V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 4.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 7.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSSOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Width 3.1mm | ||
Typical Gate Charge @ Vgs 59 nC @ 8V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 4.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1.02mm | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
Low On-Resistance
ESD Protected Gate
Applications
Battery Management Application
Power Management Functions
DC-DC Converters