Diodes Inc Dual N-Channel MOSFET, 33.2 A, 60 V, 8-Pin PowerDI5060-8 DMTH6016LPD-13
- RS Stock No.:
- 182-7321P
- Mfr. Part No.:
- DMTH6016LPD-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£62.40
(exc. VAT)
£74.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 March 2026
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Units | Per unit |
|---|---|
| 100 - 240 | £0.624 |
| 250 - 490 | £0.607 |
| 500 - 990 | £0.591 |
| 1000 + | £0.577 |
*price indicative
- RS Stock No.:
- 182-7321P
- Mfr. Part No.:
- DMTH6016LPD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerDI5060-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 28 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 37.5 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Width | 4.95mm | |
| Length | 5.85mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 17 nC @ 10V | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 33.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerDI5060-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 28 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 37.5 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Width 4.95mm | ||
Length 5.85mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 17 nC @ 10V | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it deal for high-efficiency power management applications.
Rated to +175° C – Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Engine Management Systems
Body Control Electronics
DCDC Converters
Environments
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Engine Management Systems
Body Control Electronics
DCDC Converters