Diodes Inc P-Channel MOSFET, 11 A, 12 V, 6-Pin U-DFN2020 DMP1009UFDF-7
- RS Stock No.:
- 182-7286P
- Mfr. Part No.:
- DMP1009UFDF-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£55.50
(exc. VAT)
£66.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 47,950 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 450 | £0.222 |
| 500 - 950 | £0.202 |
| 1000 - 1950 | £0.179 |
| 2000 + | £0.169 |
*price indicative
- RS Stock No.:
- 182-7286P
- Mfr. Part No.:
- DMP1009UFDF-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | U-DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Width | 2.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.05mm | |
| Typical Gate Charge @ Vgs | 44 nC @ 8V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.58mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type U-DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Width 2.05mm | ||
Maximum Operating Temperature +150 °C | ||
Length 2.05mm | ||
Typical Gate Charge @ Vgs 44 nC @ 8V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.58mm | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low On-Resistance
Fast Switching Speed
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
PCB footprint of 4mm2
Low On-Resistance
Fast Switching Speed
Applications
Battery Management Application
Power Management Functions
DC-DC Converters