Diodes Inc P-Channel MOSFET, 4.7 A, 20 V, 3-Pin X2-DFN2015 DMP2045UFY4-7
- RS Stock No.:
- 182-7118P
- Mfr. Part No.:
- DMP2045UFY4-7
- Brand:
- DiodesZetex
Subtotal 100 units (supplied on a continuous strip)*
£8.40
(exc. VAT)
£10.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,000 unit(s) shipping from 12 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 + | £0.084 |
*price indicative
- RS Stock No.:
- 182-7118P
- Mfr. Part No.:
- DMP2045UFY4-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | X2-DFN2015 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 1.49 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.57mm | |
| Number of Elements per Chip | 1 | |
| Length | 2.07mm | |
| Typical Gate Charge @ Vgs | 6.8 nC @ 4.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.35mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 4.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X2-DFN2015 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 1.49 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.57mm | ||
Number of Elements per Chip 1 | ||
Length 2.07mm | ||
Typical Gate Charge @ Vgs 6.8 nC @ 4.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.35mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters