Diodes Inc Dual N/P-Channel MOSFET, 4.6 A, 3.3 A, 30 V, 6-Pin TSOT-26 DMC3071LVT-7
- RS Stock No.:
- 182-7079P
- Mfr. Part No.:
- DMC3071LVT-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£21.40
(exc. VAT)
£25.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,200 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 400 | £0.107 |
| 500 - 900 | £0.086 |
| 1000 - 1900 | £0.078 |
| 2000 + | £0.072 |
*price indicative
- RS Stock No.:
- 182-7079P
- Mfr. Part No.:
- DMC3071LVT-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.6 A, 3.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSOT-26 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 140 (PChannel) mΩ, 90 (NChannel) mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5 (NChannel) V, 2.5 (PChannel) V | |
| Minimum Gate Threshold Voltage | 1 (NChannel) V, 1 (PChannel) V | |
| Maximum Power Dissipation | 1.1 W | |
| Maximum Gate Source Voltage | ±20 V, ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V (NChannel), 6.5 nC @ 10 V (PChannel) | |
| Number of Elements per Chip | 2 | |
| Length | 3mm | |
| Width | 1.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.6 A, 3.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSOT-26 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 140 (PChannel) mΩ, 90 (NChannel) mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (NChannel) V, 2.5 (PChannel) V | ||
Minimum Gate Threshold Voltage 1 (NChannel) V, 1 (PChannel) V | ||
Maximum Power Dissipation 1.1 W | ||
Maximum Gate Source Voltage ±20 V, ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.5 nC @ 10 V (NChannel), 6.5 nC @ 10 V (PChannel) | ||
Number of Elements per Chip 2 | ||
Length 3mm | ||
Width 1.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.9mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions