Diodes Inc N-Channel MOSFET, 500 mA, 30 V, 3-Pin SOT-23 DMN31D5L-7
- RS Stock No.:
- 182-7039P
- Mfr. Part No.:
- DMN31D5L-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£14.80
(exc. VAT)
£17.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,000 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 400 | £0.074 |
| 500 - 900 | £0.059 |
| 1000 - 1900 | £0.054 |
| 2000 + | £0.05 |
*price indicative
- RS Stock No.:
- 182-7039P
- Mfr. Part No.:
- DMN31D5L-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.6V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 520 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.2 nC @ 10V | |
| Width | 1.4mm | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.6V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 520 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.2 nC @ 10V | ||
Width 1.4mm | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Power Management Functions
Backlighting
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Power Management Functions
Backlighting