Diodes Inc P-Channel MOSFET, 6.5 A, 20 V, 8-Pin SO-8 DMP2040USD-13
- RS Stock No.:
- 182-7019P
- Mfr. Part No.:
- DMP2040USD-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£67.25
(exc. VAT)
£80.75
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 June 2026
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Units | Per unit |
|---|---|
| 250 - 450 | £0.269 |
| 500 - 950 | £0.215 |
| 1000 - 1950 | £0.179 |
| 2000 + | £0.165 |
*price indicative
- RS Stock No.:
- 182-7019P
- Mfr. Part No.:
- DMP2040USD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.9mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 8V | |
| Length | 4.95mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.9mm | ||
Typical Gate Charge @ Vgs 19 nC @ 8V | ||
Length 4.95mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters