Diodes Inc P-Channel MOSFET, 600 mA, 450 V, 3-Pin SOT-223 DMP45H21DHE-13
- RS Stock No.:
- 182-6920
- Mfr. Part No.:
- DMP45H21DHE-13
- Brand:
- DiodesZetex
Subtotal (1 reel of 2500 units)*
£477.50
(exc. VAT)
£572.50
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 22 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.191 | £477.50 |
*price indicative
- RS Stock No.:
- 182-6920
- Mfr. Part No.:
- DMP45H21DHE-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 450 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 21 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 12.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 6.55mm | |
| Width | 3.55mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 4.2 nC @ 10V | |
| Height | 1.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 450 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 21 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 12.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 6.55mm | ||
Width 3.55mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.2 nC @ 10V | ||
Height 1.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply