Toshiba N-Channel MOSFET, 800 mA, 20 V, 3-Pin 2-2H1S SSM3K56FS,LF(T

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RS Stock No.:
182-5545
Mfr. Part No.:
SSM3K56FS,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

800 mA

Maximum Drain Source Voltage

20 V

Package Type

2-2H1S

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

235 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Typical Gate Charge @ Vgs

1 nC @ 4.5 V

Length

1.6mm

Width

0.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.65mm

COO (Country of Origin):
TH
5-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)
Applications
High-Speed Switching