onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C
- RS Stock No.:
- 181-1899P
- Mfr. Part No.:
- FDP2D3N10C
- Brand:
- onsemi
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Subtotal 20 units (supplied in a tube)*
£71.00
(exc. VAT)
£85.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,548 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | £3.55 |
| 200 + | £3.08 |
*price indicative
- RS Stock No.:
- 181-1899P
- Mfr. Part No.:
- FDP2D3N10C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 222A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.21mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.67 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 222A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 15.21mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.67 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
Power Density & Shielded Gate
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 108nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Good EMI performance
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