Vishay TrenchFET N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3
- RS Stock No.:
- 180-8002P
- Mfr. Part No.:
- SI4900DY-T1-E3
- Brand:
- Vishay
Subtotal 10 units (supplied on a continuous strip)*
£3.19
(exc. VAT)
£3.83
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,990 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 10 + | £0.319 |
*price indicative
- RS Stock No.:
- 180-8002P
- Mfr. Part No.:
- SI4900DY-T1-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.072 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.072 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Number of Elements per Chip 1 | ||
The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.
Pb-free
Halogen free
Halogen free