Vishay MOSFET SIS412DN-T1-GE3

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Bulk discount available

Subtotal 200 units (supplied on a reel)*

£66.00

(exc. VAT)

£80.00

(inc. VAT)

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Units
Per unit
200 - 480£0.33
500 - 980£0.26
1000 - 1980£0.203
2000 +£0.182

*price indicative

Packaging Options:
RS Stock No.:
180-7909P
Mfr. Part No.:
SIS412DN-T1-GE3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Load switches
• Notebook PCs
• System power