Vishay TrenchFET P-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP-6 SI3421DV-T1-GE3

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Subtotal 200 units (supplied on a reel)*

£50.60

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£60.80

(inc. VAT)

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500 - 980£0.219
1000 - 1980£0.202
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Packaging Options:
RS Stock No.:
180-7895P
Mfr. Part No.:
SI3421DV-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0192 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Adaptor switch
• DC/DC converter
• For mobile computing/consumer
• Load switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested