Vishay MOSFET SI7956DP-T1-GE3
- RS Stock No.:
- 180-7886P
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Brand:
- Vishay
Subtotal 5 units (supplied on a continuous strip)*
£11.44
(exc. VAT)
£13.73
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,000 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £2.288 |
*price indicative
- RS Stock No.:
- 180-7886P
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dual MOSFET for space savings
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half bridge and forward converters
• High efficiency primary side switches
• High efficiency primary side switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested