onsemi NDT451AN N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-223 NDT451AN
- RS Stock No.:
- 178-7632
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Subtotal (1 reel of 4000 units)*
£1,436.00
(exc. VAT)
£1,724.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.359 | £1,436.00 |
*price indicative
- RS Stock No.:
- 178-7632
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-223 | |
| Series | NDT451AN | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.035 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -65 °C | |
| Height | 1.7mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-223 | ||
Series NDT451AN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.035 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Length 6.7mm | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -65 °C | ||
Height 1.7mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The ON Semiconductor NDT451AN is power SOT N channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
High power and current handling capability in a widely used surface mount package
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.