onsemi Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 NTJD5121NT1G
- RS Stock No.:
- 178-7611
- Mfr. Part No.:
- NTJD5121NT1G
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£132.00
(exc. VAT)
£159.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 27,000 unit(s) ready to ship
- Plus 999,972,000 unit(s) shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.044 | £132.00 |
*price indicative
- RS Stock No.:
- 178-7611
- Mfr. Part No.:
- NTJD5121NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 266 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.35mm | |
| Length | 2.2mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 0.9 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 266 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.35mm | ||
Length 2.2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.9 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor