N-Channel MOSFET, 45 A, 100 V, 8-Pin TDSON Infineon BSC196N10NSGATMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
178-7425
Mfr. Part No.:
BSC196N10NSGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Series

OptiMOS 2

Height

1.1mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.