- RS Stock No.:
- 178-4655
- Mfr. Part No.:
- FCMT180N65S3
- Brand:
- onsemi
Available to back order for despatch 28/10/2024
Price Each (In a Pack of 10)
£2.45
(exc. VAT)
£2.94
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £2.45 | £24.50 |
100 - 240 | £1.943 | £19.43 |
250 - 490 | £1.892 | £18.92 |
500 - 990 | £1.844 | £18.44 |
1000 + | £1.798 | £17.98 |
*price indicative
- RS Stock No.:
- 178-4655
- Mfr. Part No.:
- FCMT180N65S3
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 17 A |
Maximum Drain Source Voltage | 650 V |
Package Type | Power88 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 180 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 139 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Width | 8mm |
Typical Gate Charge @ Vgs | 33 nC @ 10 V |
Length | 8mm |
Maximum Operating Temperature | +150 °C |
Height | 1.05mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
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