N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0
- RS Stock No.:
- 178-4645
- Mfr. Part No.:
- FCD360N65S3R0
- Brand:
- onsemi
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- RS Stock No.:
- 178-4645
- Mfr. Part No.:
- FCD360N65S3R0
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
Optimized Capacitance
Internal Gate Resistance: 1 Ω
Typ. RDS(on) = 310 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
Optimized Capacitance
Internal Gate Resistance: 1 Ω
Typ. RDS(on) = 310 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter