onsemi N-Channel MOSFET, 83 A, 40 V, 3-Pin DPAK NVD5C454NT4G
- RS Stock No.:
- 178-4640P
- Mfr. Part No.:
- NVD5C454NT4G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£100.30
(exc. VAT)
£120.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £1.003 |
| 250 + | £0.87 |
*price indicative
- RS Stock No.:
- 178-4640P
- Mfr. Part No.:
- NVD5C454NT4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 56 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 56 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Height 2.25mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- VN
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance.Suitable for automotive applications.
Features
Low on-resistance
High current capability
PPAP capable
Benefits
Minimal conduction losses
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
End Products
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
Low on-resistance
High current capability
PPAP capable
Benefits
Minimal conduction losses
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
End Products
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps