onsemi N-Channel MOSFET, 35 A, 40 V, 5-Pin DFN NVMFS5C468NT1G
- RS Stock No.:
- 178-4638P
- Mfr. Part No.:
- NVMFS5C468NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£267.00
(exc. VAT)
£320.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,500 unit(s), ready to ship
Units | Per unit |
|---|---|
| 500 - 950 | £0.534 |
| 1000 + | £0.463 |
*price indicative
- RS Stock No.:
- 178-4638P
- Mfr. Part No.:
- NVMFS5C468NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 28 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 7.9 nC @ 10 V | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 28 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 7.9 nC @ 10 V | ||
Length 5.1mm | ||
Width 6.1mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver – ABS, Fuel Injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver – ABS, Fuel Injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body