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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	40 A
	Maximum Drain Source Voltage	650 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	82 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	313 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Length	10.67mm
	Number of Elements per Chip	1
	Width	9.65mm
	Typical Gate Charge @ Vgs	81 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Forward Diode Voltage	1.3V
	Height	4.58mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 40 A
	Maximum Drain Source Voltage 650 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 82 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 313 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Length 10.67mm
	Number of Elements per Chip 1
	Width 9.65mm
	Typical Gate Charge @ Vgs 81 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Forward Diode Voltage 1.3V
	Height 4.58mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features
700 V @ T_J = 150
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
Solar / UPS
EV charger

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK NTB082N65S3F