Vishay Siliconix EL-Series N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247AC SIHG30N60AEL-GE3
- RS Stock No.:
- 178-3964
- Mfr. Part No.:
- SIHG30N60AEL-GE3
- Brand:
- Vishay Siliconix
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-3964
- Mfr. Part No.:
- SIHG30N60AEL-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | EL-Series | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 15.87mm | |
| Transistor Material | Si | |
| Width | 5.31mm | |
| Number of Elements per Chip | 1 | |
| Height | 20.82mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 600 V | ||
Series EL-Series | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 15.87mm | ||
Transistor Material Si | ||
Width 5.31mm | ||
Number of Elements per Chip 1 | ||
Height 20.82mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
FEATURES
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
High-intensity discharge (HID)
Fluorescent ballast lighting
Industrial
Welding
Induction heating
Motor drives
Battery chargers
Renewable energy
Solar (PV inverters)
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
High-intensity discharge (HID)
Fluorescent ballast lighting
Industrial
Welding
Induction heating
Motor drives
Battery chargers
Renewable energy
Solar (PV inverters)