P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK Vishay Siliconix SQD40061EL_GE3
- RS Stock No.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Brand:
- Vishay Siliconix
1870 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 10)
£0.969
(exc. VAT)
£1.163
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 90 | £0.969 | £9.69 |
| 100 - 490 | £0.824 | £8.24 |
| 500 - 990 | £0.728 | £7.28 |
| 1000 + | £0.631 | £6.31 |
| *price indicative | ||
- RS Stock No.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Brand:
- Vishay Siliconix
Technical Reference
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
Product Details
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 2.38mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 6.22mm |
| Forward Diode Voltage | 1.5V |