Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
- RS Stock No.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.20
(exc. VAT)
£12.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,580 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.02 | £10.20 |
| 100 - 490 | £0.867 | £8.67 |
| 500 - 990 | £0.766 | £7.66 |
| 1000 + | £0.664 | £6.64 |
*price indicative
- RS Stock No.:
- 178-3960
- Mfr. Part No.:
- SQD40061EL_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 2.38mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.5V | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance