Vishay Siliconix TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3
- RS Stock No.:
- 178-3934P
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£117.80
(exc. VAT)
£141.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,820 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £2.356 |
| 100 - 495 | £2.232 |
| 500 - 995 | £2.098 |
| 1000 + | £1.836 |
*price indicative
- RS Stock No.:
- 178-3934P
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8DC | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 900 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +20 V, +6 V | |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Length | 5.99mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.07mm | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK SO-8DC | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 900 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V, +6 V | ||
Typical Gate Charge @ Vgs 125 nC @ 10 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Length 5.99mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.07mm | ||
RoHS Status: Exempt
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss